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Ion implantation effect on vapor deposited organic solar cells based on pn junctions or interpenetrating networks of donor and acceptor small molecules

Identifieur interne : 00B270 ( Main/Repository ); précédent : 00B269; suivant : 00B271

Ion implantation effect on vapor deposited organic solar cells based on pn junctions or interpenetrating networks of donor and acceptor small molecules

Auteurs : RBID : Pascal:06-0125682

Descripteurs français

Pascal (Inist)
- Implantation ion, Cellule solaire, Jonction p n, Dispositif photovoltaïque, Hétérojonction, Couche active, Structure sandwich, Courant court circuit, Tension circuit ouvert, Fullerènes, Fabrication microélectronique, Dispositif optoélectronique.

English descriptors

KwdEn :
- Active layer, Fullerenes, Heterojunction, Ion implantation, Microelectronic fabrication, Open circuit voltage, Optoelectronic device, Photovoltaic cell, Sandwich structure, Short circuit currents, Solar cell, p n junction.

Abstract

In this paper we report the achievement, with a co- evaporation set up, of photovoltaic cells based on single heterojunction or interpenetrating networks of organic donor and acceptor molecules as active layer. A donor-acceptor couple, zinc phthalocyanine-C₆₀ (ZnPc-C₆₀) has been studied, sandwiched between indium tin oxide (ITO) and aluminum contacts. In the case of heterojunctions, Sodium ion implantation of the C₆₀ layer or Iodine ion implantation of the phthalocyanine layer improves the current-voltage 1(V) characteristics of the single heterojunctions. An increase of both short circuit current Icc and open circuit voltage Voc has been noticed.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ion implantation effect on vapor deposited organic solar cells based on pn junctions or interpenetrating networks of donor and acceptor small molecules</title>
<author><name sortKey="Ratier, Bernard" uniqKey="Ratier B">Bernard Ratier</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Bernard Ratier, Benoit Brousse, and André Moliton, UMOP , Limoges University, 123 Avenue Albert Thomas</s1>
<s2>87060 Limoges</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Limousin</region>
<settlement type="city">Limoges</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Brousse, Benoit" uniqKey="Brousse B">Benoit Brousse</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Bernard Ratier, Benoit Brousse, and André Moliton, UMOP , Limoges University, 123 Avenue Albert Thomas</s1>
<s2>87060 Limoges</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Limousin</region>
<settlement type="city">Limoges</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Moliton, Andre" uniqKey="Moliton A">André Moliton</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Bernard Ratier, Benoit Brousse, and André Moliton, UMOP , Limoges University, 123 Avenue Albert Thomas</s1>
<s2>87060 Limoges</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Limousin</region>
<settlement type="city">Limoges</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">06-0125682</idno>
<date when="2004">2004</date>
<idno type="stanalyst">PASCAL 06-0125682 INIST</idno>
<idno type="RBID">Pascal:06-0125682</idno>
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</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active layer</term>
<term>Fullerenes</term>
<term>Heterojunction</term>
<term>Ion implantation</term>
<term>Microelectronic fabrication</term>
<term>Open circuit voltage</term>
<term>Optoelectronic device</term>
<term>Photovoltaic cell</term>
<term>Sandwich structure</term>
<term>Short circuit currents</term>
<term>Solar cell</term>
<term>p n junction</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Implantation ion</term>
<term>Cellule solaire</term>
<term>Jonction p n</term>
<term>Dispositif photovoltaïque</term>
<term>Hétérojonction</term>
<term>Couche active</term>
<term>Structure sandwich</term>
<term>Courant court circuit</term>
<term>Tension circuit ouvert</term>
<term>Fullerènes</term>
<term>Fabrication microélectronique</term>
<term>Dispositif optoélectronique</term>
</keywords>
</textClass>
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<front><div type="abstract" xml:lang="en">In this paper we report the achievement, with a co- evaporation set up, of photovoltaic cells based on single heterojunction or interpenetrating networks of organic donor and acceptor molecules as active layer. A donor-acceptor couple, zinc phthalocyanine-C<sub>60</sub>
 (ZnPc-C<sub>60</sub>
) has been studied, sandwiched between indium tin oxide (ITO) and aluminum contacts. In the case of heterojunctions, Sodium ion implantation of the C<sub>60</sub>
 layer or Iodine ion implantation of the phthalocyanine layer improves the current-voltage 1(V) characteristics of the single heterojunctions. An increase of both short circuit current Icc and open circuit voltage Voc has been noticed.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA08 i1="01" i2="1" l="ENG"><s1>Ion implantation effect on vapor deposited organic solar cells based on pn junctions or interpenetrating networks of donor and acceptor small molecules</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>IEEE-ISIE 2004 : proceedings of the 2004 IEEE International Symposium on Industrial Electronics, Ajaccio, France, May 4-7, 2004</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>RATIER (Bernard)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BROUSSE (Benoit)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MOLITON (André)</s1>
</fA11>
<fA14 i1="01"><s1>Bernard Ratier, Benoit Brousse, and André Moliton, UMOP , Limoges University, 123 Avenue Albert Thomas</s1>
<s2>87060 Limoges</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>Institute of electrical and electronics engineers</s1>
<s3>USA</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s2>Vol2, 1425-1428</s2>
</fA20>
<fA21><s1>2004</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA25 i1="01"><s1>IEEE</s1>
<s2>Piscataway NJ</s2>
</fA25>
<fA26 i1="01"><s0>0-7803-8304-4</s0>
</fA26>
<fA30 i1="01" i2="1" l="ENG"><s1>International symposium on industrial electronics</s1>
<s3>Ajaccio FRA</s3>
<s4>2004-05-04</s4>
</fA30>
<fA43 i1="01"><s1>INIST</s1>
<s2>Y 38547</s2>
<s5>354000124520832450</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2006 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>17 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>06-0125682</s0>
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<fA60><s1>C</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this paper we report the achievement, with a co- evaporation set up, of photovoltaic cells based on single heterojunction or interpenetrating networks of organic donor and acceptor molecules as active layer. A donor-acceptor couple, zinc phthalocyanine-C<sub>60</sub>
 (ZnPc-C<sub>60</sub>
) has been studied, sandwiched between indium tin oxide (ITO) and aluminum contacts. In the case of heterojunctions, Sodium ion implantation of the C<sub>60</sub>
 layer or Iodine ion implantation of the phthalocyanine layer improves the current-voltage 1(V) characteristics of the single heterojunctions. An increase of both short circuit current Icc and open circuit voltage Voc has been noticed.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D05I03D</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="03" i2="X"><s0>001D03F15</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>001D03F02</s0>
</fC02>
<fC02 i1="05" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Implantation ion</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Ion implantation</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Implantación ión</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Cellule solaire</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Solar cell</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Célula solar</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Jonction p n</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>p n junction</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Unión p n</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Dispositif photovoltaïque</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Photovoltaic cell</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Dispositivo fotovoltaico</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Hétérojonction</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Heterojunction</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Heterounión</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Couche active</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Active layer</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Capa activa</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Structure sandwich</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Sandwich structure</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Estructura sandwich</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Courant court circuit</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Short circuit currents</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Tension circuit ouvert</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Open circuit voltage</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Fullerènes</s0>
<s5>22</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Fullerenes</s0>
<s5>22</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Fabrication microélectronique</s0>
<s5>31</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Microelectronic fabrication</s0>
<s5>31</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0>
<s5>31</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0>
<s5>32</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Optoelectronic device</s0>
<s5>32</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0>
<s5>32</s5>
</fC03>
<fN21><s1>072</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Ion implantation effect on vapor deposited organic solar cells based on pn junctions or interpenetrating networks of donor and acceptor small molecules

Ion implantation effect on vapor deposited organic solar cells based on pn junctions or interpenetrating networks of donor and acceptor small molecules

Descripteurs français

English descriptors

Abstract

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Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri